InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm

Schlosser, Peter and Hastie, Jennifer and Calvez, Stephane and Krysa, A.B. and Dawson, Martin (2009) InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm. In: Annual Meeting of the IEEE Photonics Society, 2009-10-04. (https://doi.org/10.1109/LEOS.2009.5343357)

Abstract

InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode.

ORCID iDs

Hastie, Jennifer ORCID: https://orcid.org/0000-0002-4066-7411

Dawson, Martin ORCID: https://orcid.org/0000-0002-6639-2989

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  Item type:	Conference or Workshop Item(Paper)
  ID code:	36725
  Dates:	Date Event 2009 Published
  Keywords:	photonics, semiconductor disk laser , InGaN laser source, Optics. Light
  Subjects:	Science > Physics > Optics. Light
  Department:	Faculty of Science > Physics Faculty of Science > Physics > Institute of Photonics
  Depositing user:	Pure Administrator
  Date deposited:	16 Jan 2012 09:56
  Last modified:	20 Jan 2021 14:46
  URI:	https://strathprints.strath.ac.uk/id/eprint/36725