InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm

Schlosser, Peter and Hastie, Jennifer and Calvez, Stephane and Krysa, A.B. and Dawson, Martin (2009) InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm. In: Annual Meeting of the IEEE Photonics Society, 2009-10-04.

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Official URL: https://doi.org/10.1109/LEOS.2009.5343357

Abstract

InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode.

ORCID iDs

Schlosser, Peter, Hastie, Jennifer

, Calvez, Stephane, Krysa, A.B. and Dawson, Martin

;

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Item metadata

Item type:	Conference or Workshop Item(Paper)
ID code:	36725
Dates:	Date Event 2009 Published
Keywords:	photonics, semiconductor disk laser , InGaN laser source, Optics. Light
Subjects:	Science > Physics > Optics. Light
Department:	Faculty of Science > Physics Faculty of Science > Physics > Institute of Photonics
Depositing user:	Pure Administrator
Date deposited:	16 Jan 2012 09:56
Last modified:	20 Jan 2021 14:46
URI:	https://strathprints.strath.ac.uk/id/eprint/36725

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