InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm

Schlosser, Peter and Hastie, Jennifer and Calvez, Stephane and Krysa, A.B. and Dawson, Martin (2009) InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm. In: Annual Meeting of the IEEE Photonics Society, 2009-10-04.

Full text not available in this repository.Request a copy from the Strathclyde author

Official URL: https://doi.org/10.1109/LEOS.2009.5343357

Abstract

InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode.

Author(s):	Schlosser, Peter, Hastie, Jennifer, Calvez, Stephane, Krysa, A.B. and Dawson, Martin
Item type:	Conference or Workshop Item(Paper)
ID code:	36725
Keywords:	photonics, semiconductor disk laser , InGaN laser source, Optics. Light
Subjects:	Science > Physics > Optics. Light
Department:	Faculty of Science > Physics Faculty of Science > Physics > Institute of Photonics
Depositing user:	Pure Administrator
Date deposited:	16 Jan 2012 09:56
Last modified:	03 Jan 2019 12:52
URI:	https://strathprints.strath.ac.uk/id/eprint/36725
Export data:

CORE (COnnecting REpositories)