InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm
Schlosser, Peter and Hastie, Jennifer and Calvez, Stephane and Krysa, A.B. and Dawson, Martin (2009) InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm. In: Annual Meeting of the IEEE Photonics Society, 2009-10-04.
Full text not available in this repository.Request a copy from the Strathclyde authorOfficial URL: https://doi.org/10.1109/LEOS.2009.5343357
Abstract
InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode.
| Creators(s): |
Schlosser, Peter, Hastie, Jennifer  ORCID: https://orcid.org/0000-0002-4066-7411, Calvez, Stephane, Krysa, A.B. and Dawson, Martin ORCID: https://orcid.org/0000-0002-6639-2989;
| Item type: | Conference or Workshop Item(Paper) |
|---|---|
| ID code: | 36725 |
| Keywords: | photonics, semiconductor disk laser , InGaN laser source, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Physics Faculty of Science > Physics > Institute of Photonics |
| Depositing user: | Pure Administrator |
| Date deposited: | 16 Jan 2012 09:56 |
| Last modified: | 05 Aug 2020 00:35 |
| URI: | https://strathprints.strath.ac.uk/id/eprint/36725 |
| Export data: |
CORE (COnnecting REpositories)
CORE (COnnecting REpositories)
CORE (COnnecting REpositories)