InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm
Schlosser, Peter and Hastie, Jennifer and Calvez, Stephane and Krysa, A.B. and Dawson, Martin (2009) InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm. In: Annual Meeting of the IEEE Photonics Society, 2009-10-04.
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Abstract
InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode.
Creators(s): |
Schlosser, Peter, Hastie, Jennifer ![]() ![]() | Item type: | Conference or Workshop Item(Paper) |
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ID code: | 36725 |
Keywords: | photonics, semiconductor disk laser , InGaN laser source, Optics. Light |
Subjects: | Science > Physics > Optics. Light |
Department: | Faculty of Science > Physics Faculty of Science > Physics > Institute of Photonics |
Depositing user: | Pure Administrator |
Date deposited: | 16 Jan 2012 09:56 |
Last modified: | 20 Jan 2021 14:46 |
URI: | https://strathprints.strath.ac.uk/id/eprint/36725 |
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