InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm
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Schlosser, Peter and Hastie, Jennifer and Calvez, Stephane and Krysa, A.B. and Dawson, Martin (2009) InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm. In: Annual Meeting of the IEEE Photonics Society, 2009-10-04. (https://doi.org/10.1109/LEOS.2009.5343357)
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InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode.
ORCID iDs
Schlosser, Peter, Hastie, Jennifer
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Item type: Conference or Workshop Item(Paper) ID code: 36725 Dates: DateEvent2009PublishedSubjects: Science > Physics > Optics. Light Department: Faculty of Science > Physics
Faculty of Science > Physics > Institute of PhotonicsDepositing user: Pure Administrator Date deposited: 16 Jan 2012 09:56 Last modified: 31 Jan 2025 04:46 URI: https://strathprints.strath.ac.uk/id/eprint/36725
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