Adsorption and decomposition of ethylene (C2H4) on GaAs(100)

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Chen, Y and Barnard, J C and Siller, L and Schmidt, J and Palmer, R E and Chen, Yu (1999) Adsorption and decomposition of ethylene (C2H4) on GaAs(100). Surface Science, 441 (1). pp. 192-198. ISSN 0039-6028 (https://doi.org/10.1016/S0039-6028(99)00859-6)

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Abstract

An understanding of the interaction of organic molecules with semiconductors is important for both fundamental research and technological applications. With such knowledge, it may be possible to bond a wide range of useful organic molecules directly to the semiconductor surface. The adsorption of ethylene, C2H4, on the arsenic-terminated GaAs(100) surface has been studied using high-resolution electron energy-loss spectroscopy (HREELS). We find that ethylene molecules are chemisorbed on the surface in a near-sp(3) hybridisation state at 300 K. Conversion from the physisorption state at 100 K to the chemisorption state is observed when the sample temperature is raised to room temperature. The sticking coefficient for ethylene on the surface at 300 K is about two orders of magnitude lower than that at 100 K. The electron-stimulated desorption (ESD) with low-energy electrons (0-50 eV) of the physisorbed species leads to quite different behaviour than heating; specifically, the desorption of H+ and CH3+ ions is due to C-H and C=C bond scission. respectively. (C) 1999 Elsevier Science B.V. All rights reserved.

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