Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents

Sun, H D and Clark, A H and Calvez, S and Dawson, M D and Shih, D K and Lin, H H (2005) Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. Applied Physics Letters, 87 (8). -. 081908. ISSN 0003-6951 (https://doi.org/10.1063/1.2034119)

Abstract

We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content.

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• Item metadata

  Item type:	Article
  ID code:	33717
  Dates:	Date Event 22 August 2005 Published
  Subjects:	Science > Physics > Optics. Light
  Department:	Faculty of Science > Physics > Institute of Photonics
  Depositing user:	Pure Administrator
  Date deposited:	18 Oct 2011 09:22
  Last modified:	11 Nov 2024 09:51
  URI:	https://strathprints.strath.ac.uk/id/eprint/33717