Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells
Gryczynski, K.G. and Vemuri, P.R. and Watson, Ian and Neogi, Arup (2011) Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells. Applied Physics Letters, 99 (12). 12905. ISSN 0003-6951
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The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.
Creators(s): |
Gryczynski, K.G., Vemuri, P.R., Watson, Ian ![]() | Item type: | Article |
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ID code: | 33605 |
Keywords: | energy gap, gallium compounds, gold, III-V semiconductors, indium compounds, metallic thin films, Photoluminescence, polaritons, red shift, semiconductor quantum wells, semiconductor-metal boundaries, surface plasmons, wide band gap semiconductors, Optics. Light, Physics and Astronomy (miscellaneous) |
Subjects: | Science > Physics > Optics. Light |
Department: | Faculty of Science > Physics > Institute of Photonics Technology and Innovation Centre > Photonics |
Depositing user: | Pure Administrator |
Date deposited: | 17 Oct 2011 11:37 |
Last modified: | 20 Jan 2021 19:34 |
Related URLs: | |
URI: | https://strathprints.strath.ac.uk/id/eprint/33605 |
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