Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells

Gryczynski, K.G. and Vemuri, P.R. and Watson, Ian and Neogi, Arup (2011) Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells. Applied Physics Letters, 99 (12). 12905. ISSN 0003-6951 (https://doi.org/10.1063/1.3640492)

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Abstract

The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.

ORCID iDs

Gryczynski, K.G., Vemuri, P.R., Watson, Ian ORCID logoORCID: https://orcid.org/0000-0002-8797-3993 and Neogi, Arup;
  • Item type:Article
    ID code:33605
    Dates:
    Date
    Event
    21 September 2011
    Published
    Keywords:energy gap, gallium compounds, gold, III-V semiconductors, indium compounds, metallic thin films, Photoluminescence, polaritons, red shift, semiconductor quantum wells, semiconductor-metal boundaries, surface plasmons, wide band gap semiconductors, Optics. Light, Physics and Astronomy (miscellaneous)
    Subjects:Science > Physics > Optics. Light
    Department:Faculty of Science > Physics > Institute of Photonics
    Technology and Innovation Centre > Photonics
    Depositing user: Pure Administrator
    Date deposited:17 Oct 2011 11:37
    Last modified:25 Mar 2023 04:05
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/33605
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