Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells

Gryczynski, K.G. and Vemuri, P.R. and Watson, Ian and Neogi, Arup (2011) Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells. Applied Physics Letters, 99 (12). ISSN 0003-6951

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Abstract

The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.

Author(s):Gryczynski, K.G., Vemuri, P.R., Watson, Ian and Neogi, Arup
Item type:Article
ID code:33605
Keywords:energy gap, gallium compounds, gold, III-V semiconductors, indium compounds, metallic thin films, Photoluminescence, polaritons, red shift, semiconductor quantum wells, semiconductor-metal boundaries, surface plasmons, wide band gap semiconductors, Optics. Light, Physics and Astronomy (miscellaneous)
Subjects:Science > Physics > Optics. Light
Department:Faculty of Science > Physics > Institute of Photonics
Technology and Innovation Centre > Photonics
Depositing user: Pure Administrator
Date deposited:17 Oct 2011 11:37
Last modified:24 May 2019 02:18
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URI:https://strathprints.strath.ac.uk/id/eprint/33605
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