Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells

Gryczynski, K.G. and Vemuri, P.R. and Watson, Ian and Neogi, Arup (2011) Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells. Applied Physics Letters, 99 (12). 12905. ISSN 0003-6951 (https://doi.org/10.1063/1.3640492)

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Abstract

The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.

ORCID iDs

Gryczynski, K.G., Vemuri, P.R., Watson, Ian ORCID logoORCID: https://orcid.org/0000-0002-8797-3993 and Neogi, Arup;
CORE (COnnecting REpositories)