150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates

Gleskova, Helena and Wagner, S. and Gasparik, V. and Kovac, P.; Pincik, E., ed. (2000) 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates. In: Book of extended abstracts. UNSPECIFIED, Bratislava, p. 24.

Abstract

This paper looks at 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates

ORCID iDs

Gleskova, Helena ORCID: https://orcid.org/0000-0001-7195-9639

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• Item metadata

  Item type:	Book Section
  ID code:	33490
  Dates:	Date Event 2000 Published
  Subjects:	Technology > Electrical engineering. Electronics Nuclear engineering
  Department:	Faculty of Engineering > Electronic and Electrical Engineering
  Depositing user:	Pure Administrator
  Date deposited:	10 Nov 2011 15:51
  Last modified:	11 Nov 2024 14:45
  URI:	https://strathprints.strath.ac.uk/id/eprint/33490