Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates : [LED display applications]

Long, K. and Gleskova, H. and Wagner, Sigurd and Sturm, J. C.; (2004) Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates : [LED display applications]. In: Device Research Conference - Conference Digest, DRC. IEEE, USA, pp. 89-90. ISBN 0780382846 (https://doi.org/10.1109/DRC.2004.1367797)

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Abstract

The short-channel performance of amorphous silicon-based thin film transistors (TFT) on high-temperature plastic substrate, was investigated. The TFT device structure was modified and plasma enhanced chemical vapor deposition (PECVD) was used to enhance the adhesion between the SiN x buffer and the substrate. The source-gate leakage current was smaller than 0.01 nA and it was limited by the measurement apparatus. The results show that the plastic substrates were freestanding and not mounted to rigid susbtrates for fabrication, which is critical for maintaining a clean and clear back surface for the optical devices.

ORCID iDs

Long, K., Gleskova, H. ORCID logoORCID: https://orcid.org/0000-0001-7195-9639, Wagner, Sigurd and Sturm, J. C.;
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