Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays
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Cheng, I. C. and Wagner, S. and Kattamis, A. Z. and Hekmatshoar, B. and Cherenack, K. H. and Gleskova, Helena and Sturm, J. C.; Chen, C. H. and Tsai, Y. S., eds. (2007) Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays. In: IDMC ‘07. UNSPECIFIED, TWN, pp. 311-314.
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This chapter looks at amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays
ORCID iDs
Cheng, I. C., Wagner, S., Kattamis, A. Z., Hekmatshoar, B., Cherenack, K. H., Gleskova, Helena ORCID: https://orcid.org/0000-0001-7195-9639 and Sturm, J. C.; Chen, C. H. and Tsai, Y. S.-
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Item type: Book Section ID code: 33443 Dates: DateEvent2007PublishedSubjects: Technology > Electrical engineering. Electronics Nuclear engineering Department: Faculty of Engineering > Electronic and Electrical Engineering Depositing user: Pure Administrator Date deposited: 04 Nov 2011 16:43 Last modified: 11 Nov 2024 14:44 URI: https://strathprints.strath.ac.uk/id/eprint/33443
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