Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?

Gleskova, Helena and Wagner, S.; Hack, M. and Madan, A. and Matsuda, A. and Powell, M. and Schiff, E. A., eds. (1995) Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons? In: Amorphous silicon technology - 1995. MRS Symposium Proceedings, 377 . Materials Research Society, USA, pp. 343-348. ISBN 9781558992801

Abstract

This chapter looks at whether thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons

ORCID iDs

Gleskova, Helena ORCID: https://orcid.org/0000-0001-7195-9639

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• Item metadata

  Item type:	Book Section
  ID code:	33437
  Dates:	Date Event 20 November 1995 Published
  Subjects:	Technology > Electrical engineering. Electronics Nuclear engineering
  Department:	Faculty of Engineering > Electronic and Electrical Engineering
  Depositing user:	Pure Administrator
  Date deposited:	04 Nov 2011 16:06
  Last modified:	11 Nov 2024 14:44
  URI:	https://strathprints.strath.ac.uk/id/eprint/33437