Recovery kinetics of phosphorus ion-implanted a-Si:H

Nakata, J. and Wagner, S. and Gleskova, Helena and Stolk, P. A. and Poate, J. M.; Hack, M. and Matsuda, A. and Schiff, E. A. and Schropp, R. and Wagner, S., eds. (1996) Recovery kinetics of phosphorus ion-implanted a-Si:H. In: Amorphous silicon technology - 1996. MRS Symposium Proceedings, 420 . Materials Research Society, USA, pp. 653-658. ISBN 9781558993235

Full text not available in this repository.Request a copy

Abstract

This chapter looks at recovery kinetics of phosphorus ion-implanted a-Si:H

ORCID iDs

Nakata, J., Wagner, S., Gleskova, Helena ORCID logoORCID: https://orcid.org/0000-0001-7195-9639, Stolk, P. A. and Poate, J. M.; Hack, M., Matsuda, A., Schiff, E. A., Schropp, R. and Wagner, S.