Recovery kinetics of phosphorus ion-implanted a-Si:H
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Nakata, J. and Wagner, S. and Gleskova, Helena and Stolk, P. A. and Poate, J. M.; Hack, M. and Matsuda, A. and Schiff, E. A. and Schropp, R. and Wagner, S., eds. (1996) Recovery kinetics of phosphorus ion-implanted a-Si:H. In: Amorphous silicon technology - 1996. MRS Symposium Proceedings, 420 . Materials Research Society, USA, pp. 653-658. ISBN 9781558993235
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This chapter looks at recovery kinetics of phosphorus ion-implanted a-Si:H
ORCID iDs
Nakata, J., Wagner, S., Gleskova, Helena ORCID: https://orcid.org/0000-0001-7195-9639, Stolk, P. A. and Poate, J. M.; Hack, M., Matsuda, A., Schiff, E. A., Schropp, R. and Wagner, S.-
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Item type: Book Section ID code: 33436 Dates: DateEvent31 December 1996PublishedSubjects: Technology > Electrical engineering. Electronics Nuclear engineering Department: Faculty of Engineering > Electronic and Electrical Engineering Depositing user: Pure Administrator Date deposited: 04 Nov 2011 16:02 Last modified: 11 Nov 2024 14:44 URI: https://strathprints.strath.ac.uk/id/eprint/33436
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