Recovery kinetics of phosphorus ion-implanted a-Si:H

Nakata, J. and Wagner, S. and Gleskova, Helena and Stolk, P. A. and Poate, J. M.; Hack, M. and Matsuda, A. and Schiff, E. A. and Schropp, R. and Wagner, S., eds. (1996) Recovery kinetics of phosphorus ion-implanted a-Si:H. In: Amorphous silicon technology - 1996. MRS Symposium Proceedings, 420 . Materials Research Society, USA, pp. 653-658. ISBN 9781558993235

Abstract

This chapter looks at recovery kinetics of phosphorus ion-implanted a-Si:H

ORCID iDs

Gleskova, Helena ORCID: https://orcid.org/0000-0001-7195-9639

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• Item metadata

  Item type:	Book Section
  ID code:	33436
  Dates:	Date Event 31 December 1996 Published
  Subjects:	Technology > Electrical engineering. Electronics Nuclear engineering
  Department:	Faculty of Engineering > Electronic and Electrical Engineering
  Depositing user:	Pure Administrator
  Date deposited:	04 Nov 2011 16:02
  Last modified:	31 Jan 2025 02:13
  URI:	https://strathprints.strath.ac.uk/id/eprint/33436