The Au/SiOx/a-Si:H structures with very thin anodic oxide layers

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Skryshevsky, V. A. and Strikha, V. I. and Gleskova, Helena (1992) The Au/SiOx/a-Si:H structures with very thin anodic oxide layers. Czechoslovak Journal of Physics, 42 (3). pp. 331-338. ISSN 0011-4626 (https://doi.org/10.1007/BF01598429)

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Abstract

Creation of a high-quality dielectric layer during the formation of the MIS struc- tures on a-Si:H poses some problems. The thermic oxide, usually used in the MOSFET technology on c-Si, is inconvenient for a-Si:H because of degradation of the a-Si:tt films owing to effusion of hydrogen deal with some successful employment of the anodic oxidation for the preparation of MIS position-sensitive detectors and for the passivation of large-area solar cells. The present paper describes the influence of the thickness of dielectric layer prepared by the anodic oxidation on t h e I - V characteristics and optical prope r t i e s of MIS structures, of Au-SiO~-a-Si:H type .

ORCID iDs

Skryshevsky, V. A., Strikha, V. I. and Gleskova, Helena ORCID logoORCID: https://orcid.org/0000-0001-7195-9639;
CORE (COnnecting REpositories)