Reversibility of the light-induced saturation and annealing of defects in a-Si:H

Gleskova, Helena and Morin, P. A. and Bullock, J. N. and Wagner, S. (1992) Reversibility of the light-induced saturation and annealing of defects in a-Si:H. Materials Letters, 13 (4-5). pp. 279-283. ISSN 0167-577X

Full text not available in this repository.Request a copy

Abstract

Results on the reversibility of the light-induced saturation and dark- and light-annealing of the deep-level defects in a-S:H films are presented. The value of the saturated defect density (Nsat) in three samples obtained after initial light-soaking was observed to decrease upon cyclic light-annealing and saturation. This drop in Nsat was observed in two samples after the second illumination while in another sample the drop was observed only after a series of experiments carried out to determine the temperature dependence of Nsat

ORCID iDs

Gleskova, Helena ORCID logoORCID: https://orcid.org/0000-0001-7195-9639, Morin, P. A., Bullock, J. N. and Wagner, S.;
CORE (COnnecting REpositories)