Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H

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Gleskova, H. and Bullock, J. N. and Wagner, S. (1993) Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H. Journal of Non-Crystalline Solids, 164-166 (PART 1). pp. 183-186. ISSN 0022-3093 (https://doi.org/10.1016/0022-3093(93)90521-X)

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Abstract

The results of a study of the kinetics of the light-induced annealing of defects in hydrogenated amorphous silicon (a-Si:H) at the temperature of 125°C are presented. The rate of removal of the metastable defects and the final steady-state defect density both increase with light intensity. The functional dependence of the light-induced annealing term on the light intensity, or carrier generation rate G, is proportional to G0.66−0.84, and thus is proportional to the density of the photo-generated carriers.

ORCID iDs

Gleskova, H. ORCID logoORCID: https://orcid.org/0000-0001-7195-9639, Bullock, J. N. and Wagner, S.;
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