Theoretical modelling of rare Earth dopants in GaN

Jones, R. and Hourahine, Benjamin; O'Donnell, Kevin and Dierolf, Volkmar, eds. (2010) Theoretical modelling of rare Earth dopants in GaN. In: Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications. Topics in Applied Physics . Springer, Dordrecht, The Netherlands, pp. 1-24. ISBN 9789048128761 (https://doi.org/10.1007/978-90-481-2877-8)

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Abstract

We review theoretical investigations into the structure and electrical activity of rare earth (RE) dopants in III-V semiconductors especially GaN. Substitutional rare earth dopants in GaN are found to be electrically inactive and require another defect to enable them to act as strong exciton traps. In contrast AlN is distinctive as it possesses a deep donor level. The electronic structure of complexes of the RE with other defects is discussed along with implications for efficient room temperature luminescence.

ORCID iDs

Jones, R. and Hourahine, Benjamin ORCID logoORCID: https://orcid.org/0000-0002-7667-7101; O'Donnell, Kevin and Dierolf, Volkmar
  • Item type:Book Section
    ID code:29637
    Dates:
    Date
    Event
    2010
    Published
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:22 Mar 2011 11:59
    Last modified:11 Nov 2024 14:42
    URI:https://strathprints.strath.ac.uk/id/eprint/29637
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