High performance polarisation independent reflective semiconductor optical amplifiers in the S, C, and L bands

Kelly, A.E. and Michie, Walter and Zhong, Wen-de and Karagiannopoulos, S. and Madden, W I and Tombling, C. and Andonovic, I. (2010) High performance polarisation independent reflective semiconductor optical amplifiers in the S, C, and L bands. IEEE Journal on Selected Areas in Communications, 28 (6). pp. 943-948. ISSN 0733-8716 (https://doi.org/10.1109/JSAC.2010.100818)

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Abstract

Polarisation independent strained bulk RSOAs have been fabricated in the S-band for the first time. In system tests at 1.25 Gbit/s, the devices have been shown to operate over >60 nm with large return Path Loss Capabilities (PLC). The devices are capable of providing >25 dB PLC over a 60 nm span and hence the combination of two RSOAs provides PLC of >25 dB over a wavelength interval of >120 nm (1470 nm to 1590 nm). The temperature performance of the C/L band device has also been studied and a PLC of >20 dB has been shown at 60°C.

ORCID iDs

Kelly, A.E., Michie, Walter ORCID logoORCID: https://orcid.org/0000-0001-5132-4572, Zhong, Wen-de, Karagiannopoulos, S., Madden, W I, Tombling, C. and Andonovic, I.;
  • Item type:Article
    ID code:26796
    Dates:
    Date
    Event
    August 2010
    Published
    Keywords:light reflection, optical communication equipment, semiconductor optical amplifiers, large return path loss capability, polarisation independent reflective semiconductor optical amplifiers, Reflective semiconductor optical amplifier, passive optical networks, Electrical Engineering. Electronics Nuclear Engineering, Computer Networks and Communications, Electrical and Electronic Engineering
    Subjects:Technology > Electrical engineering. Electronics Nuclear engineering
    Department:Faculty of Engineering > Electronic and Electrical Engineering
    Depositing user: Miss Morag Aitken
    Date deposited:16 Sep 2010 14:13
    Last modified:25 Mar 2023 03:57
    URI:https://strathprints.strath.ac.uk/id/eprint/26796
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