High performance polarisation independent reflective semiconductor optical amplifiers in the S, C, and L bands
Kelly, A.E. and Michie, Walter and Zhong, Wen-de and Karagiannopoulos, S. and Madden, W I and Tombling, C. and Andonovic, I. (2010) High performance polarisation independent reflective semiconductor optical amplifiers in the S, C, and L bands. IEEE Journal on Selected Areas in Communications, 28 (6). pp. 943-948. ISSN 0733-8716 (https://doi.org/10.1109/JSAC.2010.100818)
Full text not available in this repository.Request a copyAbstract
Polarisation independent strained bulk RSOAs have been fabricated in the S-band for the first time. In system tests at 1.25 Gbit/s, the devices have been shown to operate over >60 nm with large return Path Loss Capabilities (PLC). The devices are capable of providing >25 dB PLC over a 60 nm span and hence the combination of two RSOAs provides PLC of >25 dB over a wavelength interval of >120 nm (1470 nm to 1590 nm). The temperature performance of the C/L band device has also been studied and a PLC of >20 dB has been shown at 60°C.
ORCID iDs
Kelly, A.E., Michie, Walter ORCID: https://orcid.org/0000-0001-5132-4572, Zhong, Wen-de, Karagiannopoulos, S., Madden, W I, Tombling, C. and Andonovic, I. ORCID: https://orcid.org/0000-0001-9093-5245;-
-
Item type: Article ID code: 26796 Dates: DateEventAugust 2010PublishedSubjects: Technology > Electrical engineering. Electronics Nuclear engineering Department: Faculty of Engineering > Electronic and Electrical Engineering Depositing user: Miss Morag Aitken Date deposited: 16 Sep 2010 14:13 Last modified: 11 Nov 2024 09:37 URI: https://strathprints.strath.ac.uk/id/eprint/26796