MEMS microwave device with switchable capacitive and inductive states

Li, L. and Uttamchandani, D.G. (2008) MEMS microwave device with switchable capacitive and inductive states. Micro and Nano Letters, 3 (3). pp. 77-81. ISSN 1750-0443 (http://dx.doi.org/10.1049/mnl:20080020)

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Abstract

A microwave microelectromechanical system (MEMS) device that can be switched between capacitive and inductive states over the frequency range of 1 to 16 GHz is reported. The device has been designed based on coplanar waveguide architecture, and realised in thickly electroplated nickel with front-side bulk micromachining of the substrate using a commercial foundry process. The capacitive-to-inductive switchover has been achieved by changing the gap of the interdigitated comb fingers using a chevron microactuator. Experimental characterisation of the device has been conducted, and capacitances ~0.2 pF in the frequency range of 1-16 GHz have been measured in the 'off' state (driving voltage of the microactuator is 0 V), whereas inductances ~0.5 nH in the frequency range of 1-16 GHz have been measured in the 'on' state (driving voltage of the microactuator is ~1 V).

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