Demonstration of a tunable RF MEMS bandpass filter using silicon foundry process

Li, L. and Uttamchandani, D.G. (2009) Demonstration of a tunable RF MEMS bandpass filter using silicon foundry process. Journal of Electromagnetic Waves and Applications, 23 (2-3). pp. 405-413. ISSN 0920-5071 (http://dx.doi.org/10.1163/156939309787604355)

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Abstract

A novel tunable microwave filter with tuning range of 13.8 GHz to 18.2 GHz fabricated using a standard silicon foundry process based on lowresistivity silicon substrate is reported. The filter effect has been realized by integrating two interdigitated comb capacitors with a straight line inductor. The tuning effect has been achieved by varying the capacitance value of the capacitors with a bimorph MEMS actuator. The structure in whole, measuring 1.5 mm × 3.3 mm, allows 27.5% continuous tuning and insertion loss ranging from 3.4 to 6 dB. The driving voltage ranges from 0 V to 0.36 V.

ORCID iDs

Li, L. and Uttamchandani, D.G. ORCID logoORCID: https://orcid.org/0000-0002-2362-4874;
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