Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells
Othonos, A. and Itskos, G. and Bradley, D.D.C. and Dawson, M.D. and Watson, I.M. (2009) Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells. Applied Physics Letters, 94 (20). 203102-1-203102-3. ISSN 0003-6951 (http://dx.doi.org/10.1063/1.3139079)
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We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. Photoluminescence and pump-probe measurements reveal significant variations in the quantum well integrated emission and the carrier relaxation decay times in the two samples, when probing both the ground and excited states of the wells. The variations are attributed to the presence of an efficient nonradiative relaxation channel associated with the proximity of the quantum well excitations to the surface-related states in the thin-cap sample.
ORCID iDs
Othonos, A., Itskos, G., Bradley, D.D.C., Dawson, M.D. ORCID: https://orcid.org/0000-0002-6639-2989 and Watson, I.M. ORCID: https://orcid.org/0000-0002-8797-3993;-
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Item type: Article ID code: 19137 Dates: DateEvent18 May 2009PublishedSubjects: Science > Physics Department: Faculty of Science > Physics > Institute of Photonics Depositing user: Strathprints Administrator Date deposited: 20 May 2010 18:26 Last modified: 02 Sep 2024 00:40 URI: https://strathprints.strath.ac.uk/id/eprint/19137