1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier

Calvez, S. and Clark, A.H. and Hopkins, J.M. and Macaluso, R. and Merlin, P. and Sun, H.D. and Dawson, M.D. and Jouhti, T. IEEE, IEEE (2003) 1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In: Indium Phosphide and Related Materials, 2003. International Conference on. IEEE, pp. 243-246. ISBN 0-7803-7704-4 (http://dx.doi.org/10.1109/ICIPRM.2003.1205360)

Abstract

We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

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• Item metadata

  Item type:	Book Section
  ID code:	18247
  Dates:	Date Event 2003 Published
  Notes:	Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.
  Subjects:	Science > Physics > Optics. Light Technology > Electrical engineering. Electronics Nuclear engineering
  Department:	Faculty of Science > Physics > Institute of Photonics Unknown Department
  Depositing user:	Strathprints Administrator
  Date deposited:	17 May 2010 11:46
  Last modified:	08 Apr 2024 12:35
  URI:	https://strathprints.strath.ac.uk/id/eprint/18247