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1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier

Calvez, S. and Clark, A.H. and Hopkins, J.M. and Macaluso, R. and Merlin, P. and Sun, H.D. and Dawson, M.D. and Jouhti, T. IEEE, IEEE (2003) 1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In: Indium Phosphide and Related Materials, 2003. International Conference on. IEEE, pp. 243-246. ISBN 0-7803-7704-4

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Abstract

We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

Item type:Book Section
ID code:18247
Notes:Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.
Keywords:III-V semiconductors, gallium arsenide, indium compounds, optical pumping, semiconductor device measurement, surface emitting lasers, GaInNAs, GaInNAs monolithic vertical-cavity semiconductor optical amplifier, on-chip gain, optical-pumping, Optics. Light, Electrical engineering. Electronics Nuclear engineering
Subjects:Science > Physics > Optics. Light
Technology > Electrical engineering. Electronics Nuclear engineering
Department:Faculty of Science > Physics > Institute of Photonics
Unknown Department
Depositing user: Strathprints Administrator
Date deposited:17 May 2010 11:46
Last modified:03 Jan 2019 12:15
URI:https://strathprints.strath.ac.uk/id/eprint/18247
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