1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier

Calvez, S. and Clark, A.H. and Hopkins, J.M. and Macaluso, R. and Merlin, P. and Sun, H.D. and Dawson, M.D. and Jouhti, T. IEEE, IEEE (2003) 1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In: Indium Phosphide and Related Materials, 2003. International Conference on. IEEE, pp. 243-246. ISBN 0-7803-7704-4 (http://dx.doi.org/10.1109/ICIPRM.2003.1205360)

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Abstract

We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

ORCID iDs

Calvez, S., Clark, A.H., Hopkins, J.M., Macaluso, R., Merlin, P., Sun, H.D., Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989 and Jouhti, T.;
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