1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier

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Calvez, S. and Clark, A.H. and Hopkins, J.M. and Macaluso, R. and Merlin, P. and Sun, H.D. and Dawson, M.D. and Jouhti, T. IEEE, IEEE (2003) 1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In: Indium Phosphide and Related Materials, 2003. International Conference on. IEEE, pp. 243-246. ISBN 0-7803-7704-4 (http://dx.doi.org/10.1109/ICIPRM.2003.1205360)

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Abstract

We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

ORCID iDs

Calvez, S., Clark, A.H., Hopkins, J.M., Macaluso, R., Merlin, P., Sun, H.D., Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989 and Jouhti, T.;
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