A 0.5w, 850nm alxga1-xasvecsel with intra-cavity silicon carbide heatspreader

Hastie, J.E. and Jeon, C.W. and Burns, D. and Hopkins, J.M. and Calvez, S. and Abram, R.H. and Dawson, M.D.; (2003) A 0.5w, 850nm alxga1-xasvecsel with intra-cavity silicon carbide heatspreader. In: Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE. IEEE, Piscataway, N.J., pp. 329-330. ISBN 0780375009 (https://doi.org/10.1109/LEOS.2002.1134063)

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Abstract

A comparison of the wavelength shift of the vertical external-cavity surface-emitting laser (VECSEL) spectrum with increasing pump power reveals silicon carbide to be a far superior heat spreader material to previously used sapphire. We have demonstrated 0.5W with no rollover from a GaAs VECSEL by utilising an intra-cavity silicon carbide heat spreader. We believe that with increased pump power, the use of silicon carbide heat spreaders will provide a useful expedient to extend the available output power of VECSEL systems.

ORCID iDs

Hastie, J.E. ORCID logoORCID: https://orcid.org/0000-0002-4066-7411, Jeon, C.W., Burns, D., Hopkins, J.M., Calvez, S., Abram, R.H. and Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989;
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