A diamond-microchip GaInNAs VECSEL operating at 1315nm

Smith, S.A. and Hopkins, J.M. and Hastie, J.E. and Calvez, S. and Kemp, A.J. and Burns, D. and Dawson, M.D. IEEE (2004) A diamond-microchip GaInNAs VECSEL operating at 1315nm. In: 2004 IEEE LEOS Annual Meeting Conference Proceedings. IEEE, Piscataway, N.J., pp. 330-331. ISBN 0780385578 (https://doi.org/10.1109/LEOS.2004.1363245)

Abstract

We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

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• Item metadata

  Item type:	Book Section
  ID code:	18185
  Dates:	Date Event 2004 Published
  Subjects:	Science > Physics > Optics. Light
  Department:	Faculty of Science > Physics Faculty of Science > Physics > Institute of Photonics
  Depositing user:	Strathprints Administrator
  Date deposited:	14 Apr 2010 10:27
  Last modified:	08 Apr 2024 12:35
  URI:	https://strathprints.strath.ac.uk/id/eprint/18185