A diamond-microchip gainnasvecsel operating at 1315nm

Smith, S.A. and Hopkins, J.M. and Hastie, J.E. and Calvez, S. and Kemp, A.J. and Burns, D. and Dawson, M.D. ieee (2004) A diamond-microchip gainnasvecsel operating at 1315nm. In: 2004 IEEE LEOS Annual Meeting Conference Proceedings. IEEE, pp. 330-331.

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Official URL: http://dx.doi.org/10.1109/LEOS.2004.1363245

Abstract

We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

Author(s):	Smith, S.A., Hopkins, J.M., Hastie, J.E. ORCID: https://orcid.org/0000-0002-4066-7411, Calvez, S., Kemp, A.J. ORCID: https://orcid.org/0000-0002-1076-3138, Burns, D. and Dawson, M.D. ORCID: https://orcid.org/0000-0002-6639-2989
Item type:	Book Section
ID code:	18185
Keywords:	diamond-microchip, gainnasvecsel, lasers, Optics. Light
Subjects:	Science > Physics > Optics. Light
Department:	Faculty of Science > Physics Faculty of Science > Physics > Institute of Photonics
Depositing user:	Strathprints Administrator
Date deposited:	14 Apr 2010 10:27
Last modified:	13 Nov 2019 05:03
Related URLs:	Event Related item
URI:	https://strathprints.strath.ac.uk/id/eprint/18185
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