A diamond-microchip gainnasvecsel operating at 1315nm
Smith, S.A. and Hopkins, J.M. and Hastie, J.E. and Calvez, S. and Kemp, A.J. and Burns, D. and Dawson, M.D. IEEE (2004) A diamond-microchip gainnasvecsel operating at 1315nm. In: 2004 IEEE LEOS Annual Meeting Conference Proceedings. IEEE, pp. 330-331.
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Abstract
We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.
ORCID iDs
Smith, S.A., Hopkins, J.M., Hastie, J.E.
ORCID: https://orcid.org/0000-0002-4066-7411, Calvez, S., Kemp, A.J. ORCID: https://orcid.org/0000-0002-1076-3138, Burns, D. and Dawson, M.D. ORCID: https://orcid.org/0000-0002-6639-2989;
Item type: Book Section ID code: 18185 Dates: DateEvent2004PublishedKeywords: diamond-microchip, gainnasvecsel, lasers, Optics. Light Subjects: Science > Physics > Optics. Light Department: Faculty of Science > Physics
Faculty of Science > Physics > Institute of PhotonicsDepositing user: Strathprints Administrator Date deposited: 14 Apr 2010 10:27 Last modified: 11 May 2021 08:00 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/18185
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