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Determination of the structural and luminescence properties of nitrides using electron backscattered diffraction and photo- and cathodoluminescence

Trager-Cowan, C. and Sweeney, F. and Wilkinson, A.J. and Watson, I.M. and Middleton, P.G. and O'Donnell, K.P. and Zubia, D. and Hersee, S.D. and Einfeldt, S. and Hommel, D. (2002) Determination of the structural and luminescence properties of nitrides using electron backscattered diffraction and photo- and cathodoluminescence. Physica Status Solidi C (1). pp. 532-536. ISSN 1862-6351

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Abstract

In this paper we describe the use of electron backscattered diffraction (EBSD) for the characterisation of nitride thin films, and report its use in the study of the spatial variation of strain across an epitaxially laterally overgrown GaN (ELOG) thin film. We also discuss the combination of luminescence and EBSD measurements to enable luminescence properties of samples to be directly correlated with their crystallographic properties. We compare photoluminescence spectra and EBSD measurements from a set of GaN thin films grown on off-axis sapphire substrates, revealing the tilt of a GaN thin film grown on a 10° off-axis sapphire substrate to be responsible for the observation of luminescence defect bands in this film. We finally report on the use of EBSD to identify zinc blende regions in a predominantly wurtzite MBE film, with cathodoluminescence used to obtain correlated luminescence spectra.

Item type: Article
ID code: 3087
Keywords: luminescence, nitrides, electron backscattered diffraction, cathodoluminescence, nanoscience, Solid state physics. Nanoscience, Condensed Matter Physics
Subjects: Science > Physics > Solid state physics. Nanoscience
Department: Faculty of Science > Physics
Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 02 Apr 2007
    Last modified: 04 Sep 2014 11:28
    URI: http://strathprints.strath.ac.uk/id/eprint/3087

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