Stimulated emission and lasing in Cu(In,Ga)Se2 thin films

Svitsiankou, I E and Pavlovskii, V N and Lutsenko, EV and Yablonskii, G P and Mudryi, A V and Zhivulko, VD and Yakushev, M V and Martin, R W (2016) Stimulated emission and lasing in Cu(In,Ga)Se2 thin films. Journal of Physics D: Applied Physics, 49 (9). 095106. ISSN 1361-6463 (https://doi.org/10.1088/0022-3727/49/9/095106)

[thumbnail of Svitsiankou-etal-AP2016-stimulated-emission-lasing-Cu(In,Ga)Se2-thin-films]
Preview
 Text. Filename: Svitsiankou_etal_AP2016_stimulated_emission_lasing_Cu_In_Ga_Se2_thin_films.pdf
Accepted Author Manuscript
Download (202kB)| Preview

Abstract

Stimulated emission and lasing in Cu(In,Ga)Se 2 thin films have been demonstrated at a temperature of 20 K using excitation by a nanosecond pulsed N 2 laser with power densities in the range from 2 to 100 kW cm − 2 . Sharp narrowing of the photoluminescence band, superlinear dependence of its intensity on excitation laser power, as well as stabilization of the spectral position and of the full-width at half-maximum of the band were observed in the films at increasing excitation intensity. The stimulated emission threshold was determined to be 20 kW cm − 2 . A gain value of 94 cm − 1 has been estimated using the variable stripe length method. Several sharp laser modes near 1.13 eV were observed above the laser threshold of I thr ~ 50 kW cm − 2

ORCID iDs

Svitsiankou, I E, Pavlovskii, V N, Lutsenko, EV, Yablonskii, G P, Mudryi, A V, Zhivulko, VD, Yakushev, M V and Martin, R W ORCID logoORCID: https://orcid.org/0000-0002-6119-764X;
CORE (COnnecting REpositories)