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Dependence of the e 2 and a1(LO) modes on InN fraction in InGaN epilayers

Hernandez, S. and Cusco, R. and Artus, L. and O'Donnell, K.P. and Martin, R.W. and Watson, I.M. and Nanishi, Y. and Kurouchi, M. and van der Stricht, W. (2004) Dependence of the e 2 and a1(LO) modes on InN fraction in InGaN epilayers. MRS Online Proceedings Library, 831. ISSN 0272-9172

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Abstract

The behavior of the E2 and A1(LO) optical phonons in Inx Ga1-x N has been analyzed by Raman scattering over the whole composition range. The frequencies of the E2 and A1(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of ≈ 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for both E2 and A1(LO) modes of InGaN.

Item type: Article
ID code: 38106
Keywords: InGaN epilayers , InN fraction , Raman scattering, Optics. Light, Mechanics of Materials, Materials Science(all), Mechanical Engineering, Condensed Matter Physics
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Physics
Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 02 Mar 2012 13:40
    Last modified: 04 Sep 2014 19:30
    URI: http://strathprints.strath.ac.uk/id/eprint/38106

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