Hernandez, S. and Cusco, R. and Artus, L. and O'Donnell, K.P. and Martin, R.W. and Watson, I.M. and Nanishi, Y. and Kurouchi, M. and van der Stricht, W. (2004) Dependence of the e 2 and a1(LO) modes on InN fraction in InGaN epilayers. MRS Online Proceedings Library, 831. ISSN 0272-9172
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
The behavior of the E2 and A1(LO) optical phonons in Inx Ga1-x N has been analyzed by Raman scattering over the whole composition range. The frequencies of the E2 and A1(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of ≈ 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for both E2 and A1(LO) modes of InGaN.
| Item type: | Article |
|---|---|
| ID code: | 38106 |
| Keywords: | InGaN epilayers , InN fraction , Raman scattering, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Physics Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 02 Mar 2012 13:40 |
| Last modified: | 12 Mar 2012 11:49 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/38106 |
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