Zhao, LX and Campion, RP and Fewster, PF and Martin, RW and Ber, BY and Kovarsky, AP and Staddon, CR and Wang, KY and Edmonds, KW and Foxon, CT and Gallagher, BL (2005) Determination of the Mn concentration in GaMnAs. Semiconductor Science and Technology, 20 (5). pp. 369-373. ISSN 0268-1242
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
Three series of 1 mu m thick Ga1-xMnxAs films with different Mn composition have been characterized using high-resolution x-ray diffraction (HRXRD). The results show that they are highly-crystalline and the growth is reproducible. The Mn compositions have also been measured by other popular methods: in situ ion gauge, x-ray fluorescence (XRF), electron probe microanalysis (EPMA) and secondary ion mass spectrometry (SIMS). The results show that the Mn concentrations measured by different methods are different and the difference between them becomes smaller with increasing Mn content.
| Item type: | Article |
|---|---|
| ID code: | 31060 |
| Keywords: | GaMnAs, semiconductors, x-ray diffraction, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Physics |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 22 Jun 2011 14:42 |
| Last modified: | 12 Mar 2012 11:27 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/31060 |
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