Zhao, LX and Campion, RP and Fewster, PF and Martin, RW and Ber, BY and Kovarsky, AP and Staddon, CR and Wang, KY and Edmonds, KW and Foxon, CT and Gallagher, BL (2005) Determination of the Mn concentration in GaMnAs. Semiconductor Science and Technology, 20 (5). pp. 369-373. ISSN 0268-1242Full text not available in this repository. (Request a copy from the Strathclyde author)
Three series of 1 mu m thick Ga1-xMnxAs films with different Mn composition have been characterized using high-resolution x-ray diffraction (HRXRD). The results show that they are highly-crystalline and the growth is reproducible. The Mn compositions have also been measured by other popular methods: in situ ion gauge, x-ray fluorescence (XRF), electron probe microanalysis (EPMA) and secondary ion mass spectrometry (SIMS). The results show that the Mn concentrations measured by different methods are different and the difference between them becomes smaller with increasing Mn content.
|Keywords:||GaMnAs, semiconductors, x-ray diffraction, Optics. Light, Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics|
|Subjects:||Science > Physics > Optics. Light|
|Department:||Faculty of Science > Physics|
|Depositing user:||Pure Administrator|
|Date Deposited:||22 Jun 2011 13:42|
|Last modified:||06 Jan 2017 09:37|