Kachkanov, V. and O'Donnell, K. P. and Martin, R. W. and Mosselmans, J. F. W. and Pereira, S. (2006) Local structure of luminescent InGaN alloys. Applied Physics Letters, 89 (10). ISSN 0003-6951Full text not available in this repository. (Request a copy from the Strathclyde author)
Comparative Ga and In K-edge extended x-ray absorption fine structure studies provide the first direct evidence of an inequality of mean In-Ga and Ga-In next-nearest neighbor separations in InGaN alloys. The degree of inequality increases with decreasing InN fraction x in the range accessible to extended x-ray absorption fine structure analysis of alloys (0.9 <x <0.1). Its concurrence with an increase of luminescence efficiency in this composition range suggests that the breakdown of In/Ga randomness in InGaN is correlated with efficient radiative recombination in blue-green light emitting devices.
|Keywords:||luminescence, absorption, InGaN alloys, Optics. Light, Physics and Astronomy (miscellaneous)|
|Subjects:||Science > Physics > Optics. Light|
|Department:||Faculty of Science > Physics|
|Depositing user:||Pure Administrator|
|Date Deposited:||21 Jun 2011 12:36|
|Last modified:||27 Apr 2016 16:43|