Strathprints logo
Strathprints Home | Open Access | Browse | Search | User area | Copyright | Help | Library Home | SUPrimo

Local structure of luminescent InGaN alloys

Kachkanov, V. and O'Donnell, K. P. and Martin, R. W. and Mosselmans, J. F. W. and Pereira, S. (2006) Local structure of luminescent InGaN alloys. Applied Physics Letters, 89 (10). -. ISSN 0003-6951

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

Comparative Ga and In K-edge extended x-ray absorption fine structure studies provide the first direct evidence of an inequality of mean In-Ga and Ga-In next-nearest neighbor separations in InGaN alloys. The degree of inequality increases with decreasing InN fraction x in the range accessible to extended x-ray absorption fine structure analysis of alloys (0.9 <x <0.1). Its concurrence with an increase of luminescence efficiency in this composition range suggests that the breakdown of In/Ga randomness in InGaN is correlated with efficient radiative recombination in blue-green light emitting devices.

Item type: Article
ID code: 31047
Keywords: luminescence, absorption, InGaN alloys, Optics. Light, Physics and Astronomy (miscellaneous)
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Physics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 21 Jun 2011 13:36
    Last modified: 05 Sep 2014 08:51
    URI: http://strathprints.strath.ac.uk/id/eprint/31047

    Actions (login required)

    View Item