Kachkanov, V. and O'Donnell, K. P. and Martin, R. W. and Mosselmans, J. F. W. and Pereira, S. (2006) Local structure of luminescent InGaN alloys. Applied Physics Letters, 89 (10). -. ISSN 0003-6951
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
Comparative Ga and In K-edge extended x-ray absorption fine structure studies provide the first direct evidence of an inequality of mean In-Ga and Ga-In next-nearest neighbor separations in InGaN alloys. The degree of inequality increases with decreasing InN fraction x in the range accessible to extended x-ray absorption fine structure analysis of alloys (0.9 <x <0.1). Its concurrence with an increase of luminescence efficiency in this composition range suggests that the breakdown of In/Ga randomness in InGaN is correlated with efficient radiative recombination in blue-green light emitting devices.
| Item type: | Article |
|---|---|
| ID code: | 31047 |
| Keywords: | luminescence, absorption, InGaN alloys, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Physics |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 21 Jun 2011 13:36 |
| Last modified: | 17 Dec 2012 16:33 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/31047 |
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