Local structure of luminescent InGaN alloys

Kachkanov, V. and O'Donnell, K. P. and Martin, R. W. and Mosselmans, J. F. W. and Pereira, S. (2006) Local structure of luminescent InGaN alloys. Applied Physics Letters, 89 (10). 101908. ISSN 0003-6951 (https://doi.org/10.1063/1.2346172)

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Abstract

Comparative Ga and In K-edge extended x-ray absorption fine structure studies provide the first direct evidence of an inequality of mean In-Ga and Ga-In next-nearest neighbor separations in InGaN alloys. The degree of inequality increases with decreasing InN fraction x in the range accessible to extended x-ray absorption fine structure analysis of alloys (0.9 <x <0.1). Its concurrence with an increase of luminescence efficiency in this composition range suggests that the breakdown of In/Ga randomness in InGaN is correlated with efficient radiative recombination in blue-green light emitting devices.

ORCID iDs

Kachkanov, V., O'Donnell, K. P. ORCID logoORCID: https://orcid.org/0000-0003-3072-3675, Martin, R. W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Mosselmans, J. F. W. and Pereira, S.;
  • Item type:Article
    ID code:31047
    Dates:
    Date
    Event
    4 September 2006
    Published
    Subjects:Science > Physics > Optics. Light
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:21 Jun 2011 12:36
    Last modified:11 Nov 2024 09:44
    URI:https://strathprints.strath.ac.uk/id/eprint/31047
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