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Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films

Trager-Cowan, C. and Sweeney, F. and Trimby, P. W. and Day, A. P. and Gholinia, A. and Schmidt, N. -H. and Parbrook, P. J. and Wilkinson, A. J. and Watson, I. M. (2007) Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films. Physical Review B, 75 (8). -. ISSN 1098-0121

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Abstract

In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging-in the scanning electron microscope-to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from a series of GaN thin films of increasing thickness and from a just coalesced epitaxial laterally overgrown GaN thin film. From our results we deduce that EBSD may be used to measure orientation changes of the order of 0.02 degrees, in GaN thin films. As EBSD has a spatial resolution of approximate to 20 nm, this means we have a powerful technique with which to quantitatively map surface tilt. We also demonstrate that electron channeling contrast images may be used to image tilt, atomic steps, and threading dislocations in GaN thin films.

Item type: Article
ID code: 31032
Keywords: plan-view image, kikuchi diffraction, microscope, rocks, Plasma physics. Ionized gases
Subjects: Science > Physics > Plasma physics. Ionized gases
Department: Faculty of Science > Physics
Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 21 Jun 2011 13:16
    Last modified: 17 Jul 2013 10:27
    URI: http://strathprints.strath.ac.uk/id/eprint/31032

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