Cathodoluminescence nano-characterization of semiconductors

Edwards, Paul R and Martin, Robert W (2011) Cathodoluminescence nano-characterization of semiconductors. Semiconductor Science and Technology, 26 (6). 064005. (https://doi.org/10.1088/0268-1242/26/6/064005)

[thumbnail of Edwards-Martin-SST-2011-Cathodoluminescence-nano-characterization-of-semiconductors]
Preview
 Text. Filename: Edwards_Martin_SST_2011_Cathodoluminescence_nano_characterization_of_semiconductors.pdf
Accepted Author Manuscript
Download (350kB)| Preview

Abstract

We give an overview of the use of cathodoluminescence (CL) in scanning electron microscopy (SEM) for the nano-scale characterization of semiconducting materials and devices. We discuss the technical aspects of the measurement, such as factors limiting the spatial resolution and design considerations for efficient collection optics. The advantages of more recent developments in the technique are outlined, including the use of the hyperspectral imaging mode and the combination of CL and other SEM-based measurements. We illustrate these points with examples from our own experience of designing and constructing CL systems and applying the technique to the characterization of III-nitride materials and nanostructures.

ORCID iDs

Edwards, Paul R ORCID logoORCID: https://orcid.org/0000-0001-7671-7698 and Martin, Robert W ORCID logoORCID: https://orcid.org/0000-0002-6119-764X;
CORE (COnnecting REpositories)