Kim, Hyeon-Soo and Dawson, M.D. and Yeom, Geun-Young (2002) Surface properties of GaN fabricated by laser lift-off and ICP etching. New Physics: Korean Physical Society, 40 (4). pp. 567-571. ISSN 0374-4914
Full text not available in this repository. (Request a copy from the Strathclyde author)Official URL: http://dx.doi.org/10.3938/jkps.40.567
Abstract
In this report, we describe the surface properties of a controlled thickness GaN microcavity which incorporates Zr2O3/SiO2 DBR stacks for both the bottom and the top mirrors. The GaN microcavities were fabricated using laser lift-off and inductively coupled plasma etching. We also compared etch rates, surface composition, and surface roughness between grown GaN and GaN fabricated by laser lift-off and ICP etching.
| Item type: | Article |
|---|---|
| ID code: | 23473 |
| Keywords: | GaN, laser lift-off, ICP etching, VCSEL, Physics |
| Subjects: | Science > Physics |
| Department: | Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 08 Jul 2010 16:34 |
| Last modified: | 04 Oct 2012 13:17 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/23473 |
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