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Surface properties of GaN fabricated by laser lift-off and ICP etching

Kim, Hyeon-Soo and Dawson, M.D. and Yeom, Geun-Young (2002) Surface properties of GaN fabricated by laser lift-off and ICP etching. New Physics: Korean Physical Society, 40 (4). pp. 567-571. ISSN 0374-4914

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Abstract

In this report, we describe the surface properties of a controlled thickness GaN microcavity which incorporates Zr2O3/SiO2 DBR stacks for both the bottom and the top mirrors. The GaN microcavities were fabricated using laser lift-off and inductively coupled plasma etching. We also compared etch rates, surface composition, and surface roughness between grown GaN and GaN fabricated by laser lift-off and ICP etching.

Item type: Article
ID code: 23473
Keywords: GaN, laser lift-off, ICP etching, VCSEL, Physics
Subjects: Science > Physics
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 08 Jul 2010 16:34
    Last modified: 04 Oct 2012 13:17
    URI: http://strathprints.strath.ac.uk/id/eprint/23473

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