Kim, Hyeon-Soo and Dawson, M.D. and Yeom, Geun-Young (2002) Surface properties of GaN fabricated by laser lift-off and ICP etching. New Physics: Korean Physical Society, 40 (4). pp. 567-571. ISSN 0374-4914Full text not available in this repository. (Request a copy from the Strathclyde author)
In this report, we describe the surface properties of a controlled thickness GaN microcavity which incorporates Zr2O3/SiO2 DBR stacks for both the bottom and the top mirrors. The GaN microcavities were fabricated using laser lift-off and inductively coupled plasma etching. We also compared etch rates, surface composition, and surface roughness between grown GaN and GaN fabricated by laser lift-off and ICP etching.
|Keywords:||GaN, laser lift-off, ICP etching, VCSEL, Physics|
|Subjects:||Science > Physics|
|Department:||Faculty of Science > Institute of Photonics|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||08 Jul 2010 15:34|
|Last modified:||27 Apr 2016 15:28|