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Rare earth doping of III-nitride alloys by ion implantation

Lorenz, K. and Alves, E. and Roqan, I.S. and Martin, R.W. and Trager-Cowan, C. and O'Donnell, K.P. and Watson, I.M. (2008) Rare earth doping of III-nitride alloys by ion implantation. Physica Status Solidi A, 205 (1). pp. 34-37. ISSN 1862-6300

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Abstract

The implantation damage and rare earth (RE) luminescence in the wide band gap ternaries AlGaN and AlInN were studied and compared to GaN. For both ternaries lower damage levels were observed and in contrast to GaN, no surface amorphisation occurs during the implantation. Damage recovery of RE implanted GaN was studied for post implant annealing at temperatures between 800 °C and 1300 °C. The blue and IR Tm related luminescence intensity is seen to increase strongly with the annealing temperature. The two Tm lines observed at 478 nm and 465 nm are assigned to the 1G4 3H6 and the 1D23F4 transition, respectively. For GaN the line at 465 nm is fully quenched at RT while it becomes the dominant line for the ternaries. The blue luminescence intensity in the ternaries is significantly stronger than in GaN. Furthermore, AlInN shows a very high ratio of blue/IR luminescence.

Item type: Article
ID code: 13951
Keywords: rare earth luminescence, wide band gap, AlGaN, AlInN, GaN, Optics. Light, Materials Chemistry, Surfaces, Coatings and Films, Surfaces and Interfaces, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Physics
Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Miss Lisa Flanagan
    Date Deposited: 09 Dec 2009 15:25
    Last modified: 04 Sep 2014 22:34
    URI: http://strathprints.strath.ac.uk/id/eprint/13951

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