Bejtka, K. and Rizzi, F. and Edwards, P.R. and Martin, R.W. and Gu, E. and Dawson, M.D. and Watson, I.M. (2005) Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers. In: Annual Conference of the British Association for Crystal Growth, 2005-09-04 - 2005-09-06.
PDF (conference presentation)
2005_09_20_20_24_27_Bejtka_BACG_1_.pdf - Accepted Author Manuscript
Download (377kB) | Preview
This speech was presented to the 2005 Annual Conference of the British Association for Crystal Growth, held in Sheffield on Sunday 4 - Tuesday 6 September 2005. The presentation focused on the design and growth of microcavities and the roles of AlInN layer in post-growth processing.
|Item type:||Conference or Workshop Item (Speech)|
|Keywords:||growth, fabrication, gaN-based structures, aluminium indium nitride insertion layers, microcavities, AlInN layer, post-growth processing, Physics|
|Subjects:||Science > Physics|
|Department:||Faculty of Science > Physics
Faculty of Science > Institute of Photonics
|Depositing user:||Strathprints Administrator|
|Date Deposited:||29 Jul 2011 13:33|
|Last modified:||08 Jul 2016 03:55|