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Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers

Bejtka, K. and Rizzi, F. and Edwards, P.R. and Martin, R.W. and Gu, E. and Dawson, M.D. and Watson, I.M. (2005) Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers. In: Annual Conference of the British Association for Crystal Growth, 2005-09-04 - 2005-09-06, Sheffield.

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Abstract

This speech was presented to the 2005 Annual Conference of the British Association for Crystal Growth, held in Sheffield on Sunday 4 - Tuesday 6 September 2005. The presentation focused on the design and growth of microcavities and the roles of AlInN layer in post-growth processing.

Item type: Conference or Workshop Item (Speech)
ID code: 9971
Keywords: growth, fabrication, gaN-based structures, aluminium indium nitride insertion layers, microcavities, AlInN layer, post-growth processing, Physics
Subjects: Science > Physics
Department: Faculty of Science > Physics
Faculty of Science > Institute of Photonics
Depositing user: Strathprints Administrator
Date Deposited: 29 Jul 2011 13:33
Last modified: 18 Jun 2015 07:06
Related URLs:
URI: http://strathprints.strath.ac.uk/id/eprint/9971

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