Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers

Bejtka, K. and Rizzi, F. and Edwards, P.R. and Martin, R.W. and Gu, E. and Dawson, M.D. and Watson, I.M. (2005) Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers. In: Annual Conference of the British Association for Crystal Growth, 2005-09-04 - 2005-09-06.

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Abstract

This speech was presented to the 2005 Annual Conference of the British Association for Crystal Growth, held in Sheffield on Sunday 4 - Tuesday 6 September 2005. The presentation focused on the design and growth of microcavities and the roles of AlInN layer in post-growth processing.

ORCID iDs

Bejtka, K., Rizzi, F., Edwards, P.R. ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Gu, E. ORCID logoORCID: https://orcid.org/0000-0002-7607-9902, Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989 and Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993;
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