Choi, H.W. and Edwards, P.R. and Liu, C. and Jeon, C.W. and Martin, R.W. and Watson, I.M. and Dawson, M.D. and Tripathy, P. and Chua, S.J. (2004) Sub-micron inGaN ring structures for high-efficiency LEDs. Physica Status Solidi C, 1 (2). pp. 202-205. ISSN 1862-6351
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
A novel technique based on the Fresnel diffraction effect for the fabrication of sub-micron ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an external diameter of 1.5 m and a wall width of 500 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 5 nm blue shift observed in the cathodoluminescence spectra can be attributed to band-filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.
| Item type: | Article |
|---|---|
| ID code: | 9077 |
| Keywords: | light-emitting-diodes, gan, sub-micron ring structures, cathodoluminescence, Optics. Light, Physics |
| Subjects: | Science > Physics > Optics. Light Science > Physics |
| Department: | Faculty of Science > Institute of Photonics Faculty of Science > Physics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 03 Nov 2009 11:22 |
| Last modified: | 04 Oct 2012 12:30 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/9077 |
Actions (login required)
| View Item |