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Wavelength dispersive X-ray analysis and cathodoluminescence techniques for monitoring the chemical removal of AllnN on an n-face GaN surface

Rizzi, F. and Edwards, P.R. and Watson, I.M. and Martin, R.W. (2006) Wavelength dispersive X-ray analysis and cathodoluminescence techniques for monitoring the chemical removal of AllnN on an n-face GaN surface. Superlattices and Microstructures, 40 (4-6). pp. 369-372. ISSN 0749-6036

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Abstract

This paper shows the selective etching process of an AlInN sacrificial layer, lattice-matched to GaN, on N-face GaN by an aqueous solution of 1,2-diaminoethane. Using the wavelength dispersive X-ray (WDX) spectrometers on an electron probe micro-analyser, together with an optical spectrometer and silicon CCD array added to the light microscope, and sharing the same focus as the electron microscope, cathodoluminescence spectra are collected from exactly the same spot as sampled by the WDX spectrometers. This technique allows the compositional properties of the etched AlInN layer and the optical properties of the semiconductor layers underlying the sacrificial layer to be scrutinised, verifying the etching selectivity and the efficiency of the process.

Item type: Article
ID code: 9071
Keywords: GaN, AlInN, wavelength dispersive X-ray analysis, cathodoluminescence, wet etching, Optics. Light, Physics, Materials Science(all), Electrical and Electronic Engineering, Condensed Matter Physics
Subjects: Science > Physics > Optics. Light
Science > Physics
Department: Faculty of Science > Institute of Photonics
Faculty of Science > Physics
Related URLs:
Depositing user: Strathprints Administrator
Date Deposited: 02 Nov 2009 11:36
Last modified: 04 Sep 2014 20:16
URI: http://strathprints.strath.ac.uk/id/eprint/9071

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