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(In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

Rizzi, F. and Edwards, P.R. and Bejtka, K. and Semond, F. and Kang, X.N. and Zhang, G.Y. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. (2007) (In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer. Applied Physics Letters, 90 (11). ISSN 0003-6951

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Abstract

Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum wells, grown on GaN substrates and bounded by two dielectric mirrors, have been fabricated by two different routes: one using laser lift-off to process structures grown on GaN-on-sapphire templates and the second using freestanding GaN substrates, which are initially processed by mechanical thinning. Both exploit the properties of an Al0.83In0.17N layer, lattice matched to the GaN substrate and spacer layers. In both cases cavity quality factors >400 are demonstrated by measurements of the cavity-filtered room-temperature excitonic emission near 410 nm.

Item type: Article
ID code: 9055
Keywords: gallium compounds, indium compounds, wide band gap semiconductors, quantum well lasers, microcavity lasers, micromirrors, laser mirrors, optical fabrication, laser materials processing, Optics. Light, Physics and Astronomy (miscellaneous)
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Faculty of Science > Physics
Depositing user: Strathprints Administrator
Date Deposited: 22 Nov 2009 11:35
Last modified: 21 May 2015 10:37
URI: http://strathprints.strath.ac.uk/id/eprint/9055

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