Rizzi, F. and Edwards, P.R. and Bejtka, K. and Semond, F. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. (2007) Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer. Superlattices and Microstructures, 41 (5-6). p. 414. ISSN 0749-6036
Full text not available in this repository. (Request a copy from the Strathclyde author)Official URL: http://dx.doi.org/10.1016/j.spmi.2007.03.031
Abstract
We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using "upper" and "lower" silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.
| Item type: | Article |
|---|---|
| ID code: | 8974 |
| Keywords: | GaN, InGaN, AlInN, quantum well, microcavity, wet etching, reflectance, cathodoluminescence, photoluminescence, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Institute of Photonics Faculty of Science > Physics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 21 Sep 2009 13:28 |
| Last modified: | 11 Jul 2012 12:46 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/8974 |
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