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Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer

Rizzi, F. and Edwards, P.R. and Bejtka, K. and Semond, F. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. (2007) Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer. Superlattices and Microstructures, 41 (5-6). p. 414. ISSN 0749-6036

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Abstract

We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using "upper" and "lower" silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.

Item type: Article
ID code: 8974
Keywords: GaN, InGaN, AlInN, quantum well, microcavity, wet etching, reflectance, cathodoluminescence, photoluminescence, Optics. Light, Materials Science(all), Electrical and Electronic Engineering, Condensed Matter Physics
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Faculty of Science > Physics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 21 Sep 2009 13:28
    Last modified: 04 Sep 2014 21:04
    URI: http://strathprints.strath.ac.uk/id/eprint/8974

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