Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition

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Li, Z. and Wang, L. and Jiu, L. and Bruckbauer, J. and Gong, Y. and Zhang, Y. and Bai, J. and Martin, R. W. and Wang, T. (2017) Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition. Applied Physics Letters, 110 (9). 091102. ISSN 0003-6951 (https://doi.org/10.1063/1.4977428)

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Abstract

Exciton localization disturbs uniform population inversion, leading to an increase in threshold current for lasing. High Al content AlGaN is required for the fabrication of deep ultra-violet LDs, generating exciton localization. Photoluminescence and cathodoluminescence measurements have been performed on high quality semi-polar (11-22) AlxGa1-xN alloys with high Al composition in order to study the optical properties of both the near-band-edge (NBE) emission and the basal-plane stacking faults (BSFs) related emission, demonstrating different behaviours. Further comparison with the exciton localization of their c-plane counterparts exhibits that the exciton localization in semi-polar (11-22) AlGaN is much smaller than that in c-plane AlGaN.

ORCID iDs

Li, Z., Wang, L., Jiu, L., Bruckbauer, J. ORCID logoORCID: https://orcid.org/0000-0001-9236-9320, Gong, Y., Zhang, Y., Bai, J., Martin, R. W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X and Wang, T.;
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