Choi, H.W. and Jeon, C.W. and Liu, C. and Watson, I.M. and Dawson, M.D. and Edwards, P.R. and Martin, R.W. and Tripathy, S. and Chua, S.J. (2005) InGaN nano-ring structures for high-efficiency light emitting diodes. Applied Physics Letters, 86 (2). ISSN 0003-6951
A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.
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