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Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structure

Coquillat, D. and Torres, J. and dYerville, M.L.V. and Legros, R. and Lascaray, J.P. and Liu, C. and Watson, I.M. and Martin, R.W. and Chong, H.M.H. and De La Rue, R.M. (2005) Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structure. Physica Status Solidi A, 202 (4). pp. 652-655. ISSN 1862-6300

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Abstract

Angular-dependent reflection measurements were used to map out the dispersion relations of the resonant Bloch modes, and the angular dispersion of the phonon modes, in a photonic crystal consisting of selectively grown GaN pyramids containing a single InxGa1-xN/GaN quantum well. The dispersion of the photons exhibits strong photonic crystal characteristics, while the mean indium content of the 2 nm thickness InxGa1-xN layer was extracted from the angular dispersion of the phonon modes.