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Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structure

Coquillat, D. and Torres, J. and dYerville, M.L.V. and Legros, R. and Lascaray, J.P. and Liu, C. and Watson, I.M. and Martin, R.W. and Chong, H.M.H. and De La Rue, R.M. (2005) Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structure. Physica Status Solidi A, 202 (4). pp. 652-655. ISSN 1862-6300

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Abstract

Angular-dependent reflection measurements were used to map out the dispersion relations of the resonant Bloch modes, and the angular dispersion of the phonon modes, in a photonic crystal consisting of selectively grown GaN pyramids containing a single InxGa1-xN/GaN quantum well. The dispersion of the photons exhibits strong photonic crystal characteristics, while the mean indium content of the 2 nm thickness InxGa1-xN layer was extracted from the angular dispersion of the phonon modes.

Item type: Article
ID code: 5259
Keywords: photons, phonons, photonics, crystals, GaN pyramids, Optics. Light, Materials Chemistry, Surfaces, Coatings and Films, Surfaces and Interfaces, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Faculty of Science > Physics
Depositing user: Strathprints Administrator
Date Deposited: 31 Jan 2008
Last modified: 21 May 2015 09:40
URI: http://strathprints.strath.ac.uk/id/eprint/5259

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