Strathprints Home | Open Access | Browse | Search | User area | Copyright | Help | Library Home | SUPrimo

Fabrication and performance of parallel-addressed InGaN micro-LED arrays

Choi, H.W. and Jeon, C.W. and Dawson, M.D. and Edwards, P.R. and Martin, R.W. (2003) Fabrication and performance of parallel-addressed InGaN micro-LED arrays. IEEE Photonics Technology Letters, 15 (4). pp. 510-512. ISSN 1041-1135

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

High-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-emitting diodes (LEDs) with individual element diameters of 8, 12, and 20 /spl mu/m, respectively, and overall dimensions 490 /spl times/490 /spl mu/m, have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallization, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have current-voltage (I-V) characteristics approaching those of broad-area reference LEDs fabricated from the same wafer, and give comparable (3-mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.

Item type: Article
ID code: 5230
Keywords: III-V semiconductors, gallium compounds, indium compounds, light emitting diodes, light scattering, optical arrays, optical interconnections, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Faculty of Science > Physics
Related URLs:
Depositing user: Strathprints Administrator
Date Deposited: 24 Jan 2008
Last modified: 16 Jul 2013 19:47
URI: http://strathprints.strath.ac.uk/id/eprint/5230

Actions (login required)

View Item