Choi, H.W. and Jeon, C.W. and Dawson, M.D. and Edwards, P.R. and Martin, R.W. (2003) Fabrication and performance of parallel-addressed InGaN micro-LED arrays. IEEE Photonics Technology Letters, 15 (4). pp. 510-512. ISSN 1041-1135
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
High-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-emitting diodes (LEDs) with individual element diameters of 8, 12, and 20 /spl mu/m, respectively, and overall dimensions 490 /spl times/490 /spl mu/m, have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallization, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have current-voltage (I-V) characteristics approaching those of broad-area reference LEDs fabricated from the same wafer, and give comparable (3-mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.
| Item type: | Article |
|---|---|
| ID code: | 5230 |
| Keywords: | III-V semiconductors, gallium compounds, indium compounds, light emitting diodes, light scattering, optical arrays, optical interconnections, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Institute of Photonics Faculty of Science > Physics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 24 Jan 2008 |
| Last modified: | 11 Jul 2012 11:28 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/5230 |
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