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Fabrication and performance of parallel-addressed InGaN micro-LED arrays

Choi, H.W. and Jeon, C.W. and Dawson, M.D. and Edwards, P.R. and Martin, R.W. (2003) Fabrication and performance of parallel-addressed InGaN micro-LED arrays. IEEE Photonics Technology Letters, 15 (4). pp. 510-512. ISSN 1041-1135

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Abstract

High-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-emitting diodes (LEDs) with individual element diameters of 8, 12, and 20 /spl mu/m, respectively, and overall dimensions 490 /spl times/490 /spl mu/m, have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallization, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have current-voltage (I-V) characteristics approaching those of broad-area reference LEDs fabricated from the same wafer, and give comparable (3-mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.

Item type: Article
ID code: 5230
Keywords: III-V semiconductors, gallium compounds, indium compounds, light emitting diodes, light scattering, optical arrays, optical interconnections, Optics. Light, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Faculty of Science > Physics
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Depositing user: Strathprints Administrator
Date Deposited: 24 Jan 2008
Last modified: 04 Sep 2014 15:39
URI: http://strathprints.strath.ac.uk/id/eprint/5230

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