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Fabrication and performance of parallel-addressed InGaN micro-LED arrays

Choi, H.W. and Jeon, C.W. and Dawson, M.D. and Edwards, P.R. and Martin, R.W. (2003) Fabrication and performance of parallel-addressed InGaN micro-LED arrays. IEEE Photonics Technology Letters, 15 (4). pp. 510-512. ISSN 1041-1135

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Abstract

High-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-emitting diodes (LEDs) with individual element diameters of 8, 12, and 20 /spl mu/m, respectively, and overall dimensions 490 /spl times/490 /spl mu/m, have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallization, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have current-voltage (I-V) characteristics approaching those of broad-area reference LEDs fabricated from the same wafer, and give comparable (3-mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.