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Simple models for InGaN alloys

Elfituri, Fathi and Hourahine, Benjamin (2012) Simple models for InGaN alloys. Physica Status Solidi A, 209 (79). ISSN 1862-6300

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Abstract

The properties of InGaN alloys are important for many applications in optoelectronics, since their fundamental gap spans the visible range. Calculating properties, particularly for InN, is theoretically challenging, especially to obtain accurate values for the band gap. We have developed a semi-empirical parametrization of (In,Ga) N using the density functional based tight binding method (DFTB), where the band gaps of InN and GaN have been empirically corrected to experiment. We demonstrate the performance of this method by calculating a range of properties for the two materials, including elastic constants and carrier effective masses. There are several methods to model alloys of these material, one of the simplest being the virtual crystal approximation, which we apply to derive electronic properties over the whole composition range for InGaN.

Item type: Article
ID code: 42202
Keywords: InGaN alloys, optoelectronics , crystal approximation, Physics, Materials Chemistry, Surfaces, Coatings and Films, Surfaces and Interfaces, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics
Subjects: Science > Physics
Department: Faculty of Science > Physics
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Depositing user: Pure Administrator
Date Deposited: 26 Nov 2012 14:02
Last modified: 27 Mar 2014 09:46
URI: http://strathprints.strath.ac.uk/id/eprint/42202

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