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Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain state

Lorenz, K. and Franco, N. and Alves, E. and Watson, I.M. and Martin, R.W. and O'Donnell, K.P. (2006) Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain state. Physical Review Letters, 97. 085501. ISSN 0031-9007

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Abstract

Monte Carlo simulations of anomalous ion channeling in near-lattice-matched AlInN/GaN bilayers allow an accurate determination of the strain state of AlInN by Rutherford backscattering or channeling. Although these strain estimates agree well with x-ray diffraction (XRD) results, XRD composition estimates are shown to have limited accuracy, due to a possible deviation from Vegard's law, which we quantify for this alloy. As the InN fraction increases from 13% to 19%, the strain in AlInN films changes from tensile to compressive with lattice matching predicted to occur at [InN]=17.1%.

Item type: Article
ID code: 4214
Keywords: photonics, lasers, optics, quantum electronics, physics, Optics. Light, Physics, Physics and Astronomy(all)
Subjects: Science > Physics > Optics. Light
Science > Physics
Department: Faculty of Science > Institute of Photonics
Faculty of Science > Physics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 06 Sep 2007
    Last modified: 04 Sep 2014 17:09
    URI: http://strathprints.strath.ac.uk/id/eprint/4214

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