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Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters

Vennegues, P. and Diaby, B. S. and Kim-Chauveau, H. and Bodiou, L. and Schenk, H. P. D. and Frayssinet, E. and Martin, R. W. and Watson, I. M. (2012) Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters. Journal of Crystal Growth, 353 (1). pp. 108-114. ISSN 0022-0248

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Abstract

Our study of samples grown in different metalorganic chemical vapor deposition reactors and with different growth conditions reveals that V-pits are always present in (InxAl1-x)N films whatever the layer thickness and the InN content. V-pits are empty inverted pyramids terminating threading dislocations. InN-rich triangular regions are present around the threading dislocations terminated by pits with a hexagonal 6-fold symmetry distribution in {11 - 20} planes. The nature of the facets of the V-pits depends on the growth conditions: pits with either {11 - 2l}, I being between 1 and 3, or {1 - 101} facets have been observed. Moreover, the nature of the threading dislocations terminated by pits also depends on the growth conditions. Our observations suggest that with a high V/III ratio only edge a + c-type dislocations are terminated by pits whereas with a low V/III ratio both edge a-type and mixed a + c-type dislocations are terminated by pits.