Picture of a black hole

Strathclyde Open Access research that creates ripples...

The Strathprints institutional repository is a digital archive of University of Strathclyde's Open Access research outputs. Strathprints provides access to thousands of research papers by University of Strathclyde researchers, including by Strathclyde physicists involved in observing gravitational waves and black hole mergers as part of the Laser Interferometer Gravitational-Wave Observatory (LIGO) - but also other internationally significant research from the Department of Physics. Discover why Strathclyde's physics research is making ripples...

Strathprints also exposes world leading research from the Faculties of Science, Engineering, Humanities & Social Sciences, and from the Strathclyde Business School.

Discover more...

Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array

Lethy, K. J. and Edwards, P. R. and Liu, C. and Wang, W. N. and Martin, R. W. (2012) Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array. Journal of Applied Physics, 112 (2). ISSN 0021-8979

[img]
Preview
PDF (Lethy et al., Journal of Applied Physics 112)
JAP_112_023507_lethy.pdf - Final Published Version

Download (2MB) | Preview

Abstract

The optical properties of GaN layers coalesced above an array of nanocolumns have important consequences for advanced optoelectronic devices. GaN nanocolumns coalesced using a nanoscale epitaxial overgrowth technique have been investigated by high resolution cathodoluminescence (CL) hyperspectral imaging. Plan-view microscopy reveals partially coalesced GaN layers with a sub-μm scale domain structure and distinct grain boundaries, which is mapped using CL spectroscopy showing high strain at the grain boundaries. Cross-sectional areas spanning the partially coalesced GaN and underlying nanocolumns are mapped using CL, revealing that the GaN bandedge peak shifts by about 25 meV across the partially coalesced layer of ∼2 μm thick. The GaN above the nanocolumns remains under tensile strain, probably due to Si out-diffusion from the mask or substrate. The cross-sectional data show how this strain is reduced towards the surface of the partially coalesced layer, possibly due to misalignment between adjacent partially coalesced regions. © 2012 American Institute of Physics