Picture of person typing on laptop with programming code visible on the laptop screen

World class computing and information science research at Strathclyde...

The Strathprints institutional repository is a digital archive of University of Strathclyde's Open Access research outputs. Strathprints provides access to thousands of Open Access research papers by University of Strathclyde researchers, including by researchers from the Department of Computer & Information Sciences involved in mathematically structured programming, similarity and metric search, computer security, software systems, combinatronics and digital health.

The Department also includes the iSchool Research Group, which performs leading research into socio-technical phenomena and topics such as information retrieval and information seeking behaviour.


Properties of semiconductor surfaces covered with very thin insulating overlayers prepared by impacts of low-energy particles

Pincik, E. and Gleskova, H. and Mullerova, J. and Nadazdy, V. and Mraz, S. and Ortega, L. and Jergel, M. and Falcony, C. and Brunner, R. and Gmucova, K. and Zeman, M. and van Swaaij, R. A. C. M. M. and Kucera, M. and Jurani, R. and Zahoran, M. (2002) Properties of semiconductor surfaces covered with very thin insulating overlayers prepared by impacts of low-energy particles. Vacuum, 67 (1). pp. 131-141. ISSN 0042-207X

Full text not available in this repository. Request a copy from the Strathclyde author


This paper deals with the formation of very thin insulating layers on crystalline (GaAs) and amorphous semiconductors (a-Si:H and a-SiGe:H) prepared by the impacts of particles of a very low energy. Plasma, ion beams and plasma immersion ion implantation (PIII) as the sources of impacting particles were used and compared. The last technique was applied successfully for the first time in the case of amorphous silicon-based semiconductors. More diagnostics techniques were used for the investigation of the transformation of the semiconductor surface properties. In the a-Si:H based MOS structures prepared by PIII technology, only two groups of defects 0.82 and 1.25 eV (D(z) and D(e), respectively) were found. We suppose that the PIII technology using the implantation at the sample voltage of ca. -1000V causes the formation of a-Si:H layers with missing group of D(h) states. The only decisive parameter determining the formation of two groups of states is the negative potential of the sample during the implantation. In aSiGe:H based MOS structures, three distributions could be prepared by a bias annealing procedure: 0.47, 0.58 and 0.95 eV corresponding to p-type (D(h)) intrinsic (D(z)) and n-type (D(e)) distributions, respectively.