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Temperature dependence of excitonic emission in CuInSe2

Yakushev, M. V. and Martin, R. W. and Mudryi, A. V. (2009) Temperature dependence of excitonic emission in CuInSe2. Physica Status Solidi C, 6 (5). pp. 1082-1085. ISSN 1862-6351

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Abstract

Radiative recombination processes in CuInSe2 (CIS) single crystals grown by the, vertical Bridgman technique were studied using photoluminescence (PL) and reflectance (RF) spectroscopies at temperatures from 4.2 to 60 K, and excitation intensity from 0.6 to 30 W/cm(2). Study of the quenching parameters of the A and B freeo and first three bound-excitons (M1, M2 and M3) in high-quality CuInSe2 single crystal leads to estimates for the binding energy of the A (7.7 meV) and B (7.9 meV) free excitons as well as dissociation energies for the M1, M2 and M3 bound-excitons.